Use Low-Level Laser and Light-Emitting Diodes in Dental Implants
试验速览
- 阶段
- 不适用
- 状态
- 已完成
- 入组人数
- 28
- 主要终点
- Resonance frequency analysis
研究概览
简要总结
Subjects were assigned in two groups: In group 1, subjects received LLL and LED 20 min/day for 10 days after implant insertion, subjects in group 2did not undergo LLL and LED. implant stability quotients(ISQs) were measured in 0,10,21,42 and 63 days after implant placement.
详细描述
Subjects eligible for study inclusion had an edentulous area at the first molar of the mandible and needed a dental implant. Subjects were excluded from study enrollment if they had any diseases that affect bone, smoking, insufficient bone in the edentulous area which needs bone augmentation, failed to return for follow-up, or refused study enrollment.
All implants were placed at least 3 months after tooth removal. The size of implants was 4.8X 10 mm (Zimmer, USA) Subjects were aligned based on computer randomization in two groups: In group 1(intervention), subjects received LLL and LED after implant placement and in group 2 (control) the same device was used while device was off.
A portable device was applied for irradiation of the intervention group with combination of 810nm laser and 632nm LED.
Subjects in group 1 underwent LLL 15 mw/cm2 and LED 10 mw/cm2 20 min every day for 10 days.
The mesiodistal and buccolingual directions were measured and the mean implant stability quotients (ISQs) were determined. The RFA measurements were performed in immediate after insertion (time0) 10 days (time1), 3 weeks (time2), 6 weeks(time3) and 9(time 4) weeks after implant placement.
研究设计
- 研究类型
- Interventional
- 分配方式
- Randomized
- 干预模型
- Parallel
- 主要目的
- Other
- 盲法
- None
入排标准
- 年龄范围
- 18 Years 至 —（Adult, Older Adult）
- 性别
- All
- 接受健康志愿者
- 是
入选标准
- •subjects eligible for study inclusion had an edentulous area at the first molar of the mandible and needed a dental implant
排除标准
- •. Subjects were excluded from study enrollment if they had any diseases that affect bone, smoking, insufficient bone in the edentulous area which needs bone augmentation, failed to return for follow-up, or refused study enrollment.
研究组 & 干预措施
Laser Emitting group
subjects received Low-Level Laser and Light-Emitting Diodes after implant placement
干预措施: Low-Level Laser and Light-Emitting Diodes (Device)
Laser Emitting group
subjects received Low-Level Laser and Light-Emitting Diodes after implant placement
干预措施: Dental implant placement (Device)
Non Emitting group
In laser emitiiing group, subjects received Low-Level Laser and Light-Emitting Diodes after implant placement and in Non-emitting group,the same device was used while device was off.
干预措施: Low-Level Laser and Light-Emitting Diodes (Device)
Non Emitting group
In laser emitiiing group, subjects received Low-Level Laser and Light-Emitting Diodes after implant placement and in Non-emitting group,the same device was used while device was off.
干预措施: Dental implant placement (Device)
结局指标
主要结局
Resonance frequency analysis
时间窗: Nine weeks after implant placement(time 4)
The stability of the implants was evaluated with resonance frequency analysis by the Osstell device
次要结局
未报告次要终点
研究者
Reza Tabrizi
associate Professor
Shiraz University of Medical Sciences