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临床试验/NCT04127643
NCT04127643Unknown不适用

Prospective Clinical Registry of Subcutaneous Implantable Cardioverter Defibrillator (S-ICD) (S-ICD Korea Registry)

Yonsei University1 个研究点 分布在 1 个国家目标入组 300 人开始时间: 2019年5月10日最近更新:
适应症

试验速览

阶段
不适用
入组人数
300
试验地点
1
主要终点
Perioperative S-ICD Complication Free Rate up to 7 days post implant

研究概览

简要总结

S-ICD avoids the use intravascular leads and their associated risks, has been increasingly used for primary and secondary prevention of sudden death. The long-term safety and feasible of S-ICD system in Asian population with a smaller body size remain unclear. The investigators propose to perform a prospective study in Korean population to investigate the safety and feasibility of S-ICD for primary or secondary prevention of sudden cardiac death.

详细描述

The investigators propose to prospectively recruit 300 patients who are qualified to receive the EMBLEM S-ICD system by following the proposed BSC Patient Screening Steps in 10 sites in Korea. All patients will be follow-up as standard of care to collect acute procedural and device related complications as well as long-term, device related, clinical and patient reported outcomes. Follow up data will be systematically collected over 24 months post-implant.

研究设计

研究类型
Observational
观察模型
Cohort
时间视角
Prospective

入排标准

年龄范围
19 Years 至 —(Adult, Older Adult)
性别
All
接受健康志愿者

入选标准

  • > 18 years of age
  • Patients with conventional indications for ICD and;
  • Ability to provide informed consent and to complete the study and required follow-up

排除标准

  • planned cardiac surgery within 3 months of enrollment;
  • life expectancy <3 months;
  • indication for CRT-D or permanent ventricular pacing for new implant;
  • incessant ventricular tachycardia and/or spontaneous, frequently recurring ventricular tachycardia that is reliably terminated with anti-tachycardia pacing; and
  • patients with unipolar pacemakers or implanted devices that revert to unipolar pacing

结局指标

主要结局

Perioperative S-ICD Complication Free Rate up to 7 days post implant

时间窗: 7 days

1 year S-ICD Complication Free Rate

时间窗: 1 year

2 year S-ICD Complication Free Rate

时间窗: 2 year

Perioperative S-ICD Complication Free Rate up to 30 days post implant

时间窗: 30 days

Percentage of inappropriate shocks for AF/SVT

时间窗: 2 year

次要结局

  • Device related discomfort(2 year)
  • Efficacy of S-ICD therapy for spontaneous VT/VF(2 year)

研究者

申办方类型
Other
责任方
Sponsor

研究点 (1)

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