Effect of Low Level Laser Therapy on Root Resorption During Orthodontic Intrusion of Maxillary Incisors

Not Applicable

• Conditions: Root Resorption of Maxillary Incisors
• Interventions: Device: gallium aluminum arsenide (Ga-Al-As) semiconductor diode laser (SMARTTM PRO, LASOTRONIX, Poland); Other: group B

• Registration Number: NCT05707416
• Lead Sponsor: Al-Azhar University

Brief Summary

The present study will be directed to evaluate the effect of low-level laser therapy on root resorption during orthodontic intrusion of upper incisors.

Detailed Description

Not available

Study Timeline

• Study First Submitted: 2022-11-22
• Study Start: 2022-12-15
• Status Verified: 2023-01
• Study First Submitted QC: 2023-01-28
• Last Update Submitted: 2023-01-28
• Study First Posted: 2023-02-01
• Last Update Posted: 2023-02-01
• Primary Completion: 2023-05-15
• Study Completion: 2023-12-20

Recruitment & Eligibility

• Status: ENROLLING_BY_INVITATION
• Sex: All
• Target Recruitment: 18

Inclusion Criteria

• Patients with age range between 12-16 years.

  • Overbite > 40% indicated for maxillary intrusion.
  • Mild to moderate crowding of upper incisors.
  • All permanent teeth erupted (excluding 3rd molars).
  • No previous orthodontic treatment.
  • Good oral hygiene with no previous periodontal surgery

Exclusion Criteria

• Transverse and/or vertical skeletal dysplasia or craniofacial malformation.

  • Retained primary or missing permanent teeth in the maxillary anterior area, and any kind of tooth/root shape anomaly.
  • Patients with root resorption, impacted canines, or dental anomalies.
  • Poor oral hygiene
  • Present or history of periodontal diseases.
  • Systemic diseases or regular use of medications that could interfere with orthodontic tooth movement.
  • History of trauma affecting the maxillary incisors.
  • Endodontically treated upper anterior teeth.

Study & Design

• Study Type: INTERVENTIONAL
• Study Design: PARALLEL

Arm && Interventions

Group	Intervention	Description
Experimental group	gallium aluminum arsenide (Ga-Al-As) semiconductor diode laser (SMARTTM PRO, LASOTRONIX, Poland)	Will includes 9 patients who will receive intrusive arche after leveling and alignment assisted with laser with wavelength 635 nm, 6.5J/cm2,The laser will be applied to 4 points of application for each tooth two labial and two palatal started immediately after first intrusive wire then at days 3,7,14 and then every 15 day until achievement of the study objectives
Control group	group B	Will includes 9 patients who will receive intrusive arches after leveling and alignment without laser application

Primary Outcome Measures

Name	Time	Method
linear amount of root resorption	change in linear root resorption at 4 months	cone beam computed linear measurements
volumetric amount of root resorption	change in volumetric root resorption at 4 months	cone beam computed volumetric measurements

Trial Locations

Locations (1)

Al Azhar Univertsity; 🇪🇬 Naşr, Egypt